, li ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 ? im-chanimel irff11o irff1ti irfft13 100 volt, 0.60 ohm hexfet? the hexfet transistors also feature all of the well established advantages of mosfets such as voltage control, freedom from second breakdown, very fast switching, ease of paralleling, and temperature sta- bility of the electrical parameters. they are well suited for applications such as switching dower supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. features: ? fast switching ? low drive current ? ease of paralleling ? no second breakdown a excellent temperature stability product summary part number IRFF110 irff111 irff112 irff113 vds 100v 60v 100v 60v rds(on) o.en 0.6s7 o.sn o.sn id 3.5a 3.5a 3.0a 3.0a case style and dimensions 066 10 0341 112100261 4.57 (0.180) max. 0.4sic018i me 10 oi4> ! 14 22 '056. 12 70(050) ?? dia? *? 2510325) ?-dla-?h 1 457 (0.1801 4 06(0 160] 1 13.03 d. 7 11 ref. dm 10 02ii / 0.41 10.016] "' 3 places conforms to jedec outline to-20saf ito-39) dimensions in millimeters and (inches) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. \ semi-conductors entourages customers to verify that datasheets are current before placing orders. ^>?%; /"^ . j. i?
IRFF110, irff111, irff112, irff113 devices in diode ratings and characteristics ig continuous source current (bodv diode) (sm pulse source current (body diode} q) vsq diode forward voltage (2) trr reverse recovery time qrr reverse recovered charge ton forward turn-on time IRFF110 irff11 1 irff112 irff113 IRFF110 irff111 irff112 irff113 IRFF110 irff111 irff112 irff113 all all all - - - - - - - - - - - - - 200 1.0 3.5 3.0 14 12 2.5 2.0 a a a a v v ns j.c modified mosfet symbol showing the integral reverse p-n junction rectifier. tc ? 25c. ls ? 3.5a, vqs - 0v tc-25c.is=3.0a,vgs = ov tj = 150c. ip = 3.5a,dlp/dt = 100a/,js tj = 150c. ip = 3.5a,dlf/dt = 100a/ns intrinsic turn-on time is negligible. turn-on speed is substantially controlled by lg -t- lq. ?tj = 25cto150c. ? pulse test: pulse width* 300^s, duty cycle < 2%. ' repetitive rating: pulse width limited by max. junction temperature. see transient thermal impedance curve (fig. 5).
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